1 power transistors 2sD2242, 2sD2242a silicon npn triple diffusion planar type darlington for power amplification n features l high foward current transfer ratio h fe l high-speed switching l allowing supply with the radial taping n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 60 80 60 80 5 8 4 15 2 150 C55 to +150 unit v v v a a w ?c ?c 2sD2242 2sD2242a 2sD2242 2sD2242a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio base to emitter voltage collector to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ceo i ebo v ceo h fe1 h fe2 * v be v ce(sat) f t t on t stg t f conditions v cb = 60v, i e = 0 v cb = 80v, i e = 0 v ce = 30v, i b = 0 v ce = 40v, i b = 0 v eb = 5v, i c = 0 i c = 30ma, i b = 0 v ce = 3v, i c = 0.5a v ce = 3v, i c = 3a v ce = 3v, i c = 3a i c = 3a, i b = 12ma i c = 5a, i b = 20ma v ce = 10v, i c = 0.5a, f = 1mhz i c = 3a, i b1 = 12ma, i b2 = C12ma, v cc = 50v min 60 80 1000 2000 typ 20 0.5 4 1 max 200 200 500 500 2 10000 2.5 2 4 unit m a m a ma v v v mhz m s m s m s 2sD2242 2sD2242a 2sD2242 2sD2242a 2sD2242 2sD2242a * h fe2 rank classification rank q p h fe2 2000 to 5000 4000 to 10000 unit: mm internal connection 1:base 2:collector 3:emitter mt4 type package 1.0 10.0 0.2 0.55 0.1 2.5 0.2 2.5 0.2 4.2 0.2 13.0 0.2 2.5 0.2 18.0 0.5 solder dip 5.0 0.1 2.25 0.2 1.2 0.1 0.65 0.1 0.55 0.1 c1.0 90 c1.0 123 1.05 0.1 0.35 0.1 b e c www.datasheet.co.kr datasheet pdf - http://www..net/
2 power transistors 2sD2242, 2sD2242a p c ta i c v ce i c v be v ce(sat) i c h fe i c c ob v cb area of safe operation (aso) r th(t) t 0 160 40 120 80 140 20 100 60 0 20 15 5 10 (1) t c =ta (2) without heat sink (p c =2.0w) (1) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 010 8 26 4 0 10 8 6 4 2 i b =4.0ma t c =25?c 3.5ma 3.0ma 2.5ma 2.0ma 1.5ma 1.0ma 0.5ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 03.2 0.8 2.4 1.6 0 10 8 6 4 2 v ce =3v t c =100?c ?5?c 25?c base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =250 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 10 10 2 10 3 10 4 10 5 v ce =3v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c 10ms t=1ms dc 2sD2242 2sD2242a i cp i c collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 ? 10 2 10 ? 1 10 ? 10 10 3 10 4 0.1 1 10 100 1000 note: r th was measured at ta=25?c and under natural convection. (1) without heat sink (2) with a 50 50 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w ) www.datasheet.co.kr datasheet pdf - http://www..net/
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